| PART |
Description |
Maker |
| MAGX-000912-500L00 MAGX-000912-SB3PPR |
GaN on SiC Depletion-Mode Transistor Technology
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-000040-00500P MAGX-000040-SB2PPR |
GaN on SiC D-Mode Transistor Technology
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-000035-09000P MAGX-000035-PB3PPR |
GaN on SiC D-Mode Transistor Technology Common-Source Configuration
|
M/A-COM Technology Solutions, Inc.
|
| RUP15020-11 |
GaN-SiC Broadband Amplifier
|
RFHIC
|
| RUP15050-11 |
GaN-SiC Broadband Amplifier
|
RFHIC
|
| RUP15050-10 |
GaN-SiC Broadband Amplifier
|
RFHIC
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| MAGX-000025-150000-V1 MAGX-000025-150000-15 |
GaN on SiC HEMT Power Transistor
|
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| TGF2023-2-05-15 |
25 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MAGX-000035-045000-V1 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solution...
|
| TGF2023-10 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
